Gyroscope sensors

ABSTRACT

A method of forming a structure for a gyroscope sensor includes forming a first dielectric over a substrate and a material layer over the first dielectric layer. A first portion of the material layer is removed to form a recess and a second portion of the material layer is removed to define a first channel between a gyro disk and a frame. A second channel is formed in the substrate corresponding to the first channel, and a portion of the first dielectric is removed to form a second dielectric between the gyro disk and the substrate.

PRIORITY CLAIM

The instant application is a continuation of U.S. application Ser. No.13/610,178, filed Sep. 11, 2012, which is a continuation of U.S.application Ser. No. 12/352,449 filed Jan. 12, 2009, now U.S. Pat. No.8,281,658, the disclosures of which are incorporated herein by referencein their entireties.

FIELD

The present disclosure relates generally to the field of gyroscopesensors.

BACKGROUND

A micro-electrical mechanical system (MEMS) gyroscope is consisted oftwo masses that are movable with respect to a stator and coupled to oneanother so as to have a relative degree of freedom. The two movablemasses are both capacitively coupled to the stator. One of the masses isdedicated to driving and is kept in oscillation at a resonancefrequency. The other mass is drawn along in an oscillating motion and,in the case of rotation of the microstructure with respect to apre-determined gyroscopic axis with an angular velocity, is subjected toa Coriolis force proportional to the angular velocity itself. Inpractice, the driven mass operates as an accelerometer that enablesdetection of the Coriolis force and acceleration and hence makes itpossible to trace back to the angular velocity.

BRIEF DESCRIPTION OF THE DRAWINGS

The present disclosure is best understood from the following detaileddescription when read with the accompanying figures. It is emphasizedthat, in accordance with the standard practice in the industry, variousfeatures are not drawn to scale and are used for illustration purposesonly. In fact, the numbers and dimensions of the various features may bearbitrarily increased or reduced for clarity of discussion.

FIG. 1A is a schematic drawing showing a system including an exemplarygyroscope sensor.

FIG. 1B is a schematic drawing illustrating a view taken along line1B-1B of FIG. 1A.

FIG. 2A is a schematic drawing showing that a small Coriolis force isapplied to a gyro disk.

FIG. 2B is a schematic drawing illustrating that a Coriolis force isapplied to a gyro disk blocking a light path.

FIG. 2C is an exemplary 3-dimensional (3-D) gyroscopic coordinatorcoordination system.

FIG. 2D is a schematic drawing illustrating an exemplary gyroscopesensor including two subpixels.

FIGS. 3A-3H are schematic cross-sectional views showing an exemplaryprocess for forming a gyro disk and a frame of a gyroscope sensor.

DETAILED DESCRIPTION

The capacitive gyroscope described above has at least three subpixelsfor detecting the Coriolis force on each of three gyroscopic axes suchas X, Y, and Z-axes. The three-subpixels gyroscope requires a diodearea. Furthermore, structures for sensing Coriolis forces on differentgyroscopic axes such as X and Z-axes are different due to the differentconfiguration of capacitors of the capacitive gyroscope. Accordingly, afew number of mask layers are used to form the capacitive gyroscope.

From the foregoing, gyroscope sensors, systems including the gyroscopesensors, operating methods, and fabricating methods thereof are desired.

It is understood that the following disclosure provides many differentembodiments, or examples, for implementing different features of theinvention. Specific examples of components and arrangements aredescribed below to simplify the present disclosure. These are, ofcourse, merely examples and are not intended to be limiting. Forexample, the formation of a first feature over or on a second feature inthe description that follows may include embodiments in which the firstand second features are formed in direct contact, and may also includeembodiments in which additional features may be formed between the firstand second features, such that the first and second features may not bein direct contacted. In addition, the present disclosure may repeatreference numerals and/or letters in the various examples. Thisrepetition is for the purpose of simplicity and clarity and does not initself dictate a relationship between the various embodiments and/orconfigurations discussed.

Embodiments of the invention relate to gyroscope sensors, systems, andfabrication methods for forming structures for the gyroscope sensors bysensing an optical signal corresponding to a wave phase change of alight beam resulting from a Coriolis force. The gyroscope sensor caninclude a first light source configured to provide a first light beamadjacent to a first edge of the gyro disk. A first light receiver can beconfigured to receive the first light beam for sensing a vibration at afirst direction of the gyro disk. Following are descriptions of variousexemplary embodiments of the present invention. The scope of theinvention is not limited thereto.

FIG. 1A is a schematic drawing showing a system including an exemplarygyroscope sensor. FIG. 1B is a schematic drawing illustrating a viewtaken along line 1B-1B of FIG. 1A. In FIG. 1A, a system 100 can includea gyroscope sensor 101 and a processing unit 170. The system 100 can bevehicle aviation systems, digital cameras, global positioning systems,wireless communication devices, computer-related peripherals,entertainment devices, or systems that include a gyroscope sensor. Thegyroscope sensor 101 can be an optical gyroscope sensor. The processingunit 170 can be coupled with the gyroscope sensor 101 for processingvibrations sensed by the gyroscope sensor 101. The processing unit 170can include a central processing unit (CPU), signal-processing unit,optical signal processing unit, other processing unit, and/orcombinations thereof.

In embodiments, the gyroscope sensor 101 can include a gyro disk 110 a,at least one light source such as light sources 130, 140, and 150, andat least one light receiver such as light receivers 155 and 160. Thelight source 130 can be configured to provide a light beam 131 adjacentto a first edge 109 a of the gyro disk 110 a. The light receiver 155 canbe configured to receive the light beam 131 for sensing a vibration at afirst direction such as a pre-determined gyroscopic X-axis of the gyrodisk 110 a. The light source 140 can be configured to provide a lightbeam 141 adjacent to a second edge 109 b of the gyro disk 110 a, whereinthe light beam 141 can be substantially parallel with the light beam131. The light receiver 155 can be configured to receive the light beam141 for sensing a vibration at a second direction such as apre-determined gyroscopic Y-axis of the gyro disk 110 a. In embodiments,the light sources 130 and 140 can be disposed over a substrate 135. Inother embodiments, the light sources 130 and 140 can be disposed ondifferent substrates. The light source 150 can be configured to providea light beam 151 adjacent to a surface 109 c of the gyro disk 110 a,wherein the light beam 151 is substantially perpendicular to the lightbeam 131. The light receiver 160 can be configured to receive the lightbeam 151 for sensing a vibration at a third direction such as apre-determined gyroscopic Z-axis of the gyro disk 110 a. It is notedthat the configuration and numbers of the light sources and lightreceivers described above are merely exemplary. The scope of theinvention is not limited thereto.

In embodiments, the gyro disk 110 a can include at least one materialsuch as silicon, germanium, other material that can have an etchselectivity different from that of the dielectric 120 a, and/or anycombinations thereof. In embodiments, the gyro disk 110 a can have a topview shape such as round, oval, square, rectangular, or other suitableshape. The gyro disk 110 a can include a portion 111 coupled with anelectrode 165. The portion 111 can include at least one channel such aschannels 111 a as shown in FIG. 1B. The channels 111 a can provide pathsthrough which the light beam 151 can pass. In embodiments, an angle θbetween two neighboring channels 111 a can be of about 30°, 45°, orother suitable degrees. One of skill in the art can modify the numbersand angle of the channels 110 a and the scope of the invention is notlimited to the drawing shown in FIG. 1B.

The light sources 130, 140, and/or 150 can be a laser diode, lightemitting diode, infrared ray (IR) emitter, X-ray emitter, other lightsource, and/or combinations thereof. The light receivers 155 and/or 160can include a sensor, optical sensor, complementarymetal-oxide-semiconductor sensor, other sensor that is capable ofreceiving the light beam based on the wavelength of the light beam.

Referring to FIG. 1A, the gyroscope sensor 101 can include a substrate102 a. The substrate 102 a can include at least one channel 113 for thelight beams 131 and 141. In embodiments, the substrate 101 can comprisean elementary semiconductor including silicon or germanium in crystal,polycrystalline, or an amorphous structure; a compound semiconductorincluding silicon carbide, gallium arsenic, gallium phosphide, indiumphosphide, indium arsenide, and indium antimonide; an alloysemiconductor including SiGe, GaAsP, AlInAs, AlGaAs, GaInAs, GaInP, andGaInAsP; any other suitable material; or combinations thereof. In oneembodiment, the alloy semiconductor substrate may have a gradient SiGefeature in which the Si and Ge composition change from one ratio at onelocation to another ratio at another location of the gradient SiGefeature. In another embodiment, the alloy SiGe is formed over a siliconsubstrate. In another embodiment, a SiGe substrate is strained.

Referring to FIG. 1A, at least one dielectric 120 a can be disposed overthe substrate 102 a. The dielectric 120 a can support and separate thegyro disk 110 a and a frame 110 b from the substrate 102 a. Inembodiments, the dielectric 120 a can include a material such as oxide,nitride, oxynitride, other dielectric that has an etch selectivitydifferent from that of the substrate 102 a, and/or combinations thereof.

The gyroscope sensor 101 can include the frame 110 b that can bedisposed around the gyro disk 110 a. The frame 110 b can be separatedfrom the substrate 102 a by the dielectric 120 a. The frame 110 b caninclude at least one channel such as channels 175 as shown in FIG. 1B.The channels 175 can provide paths through which the light beam 151 canpass. In embodiments, the channels 175 can correspond to the channels111 a such that the light beam 151 can pass through the frame 110 b andthe portion 111 of the gyro disk 110 a. In embodiments, the frame 110 bcan include at least one material such as silicon, germanium, othermaterial that has an etch selectivity different from that of thedielectric 120 a, and/or any combinations thereof. In other embodiments,the frame 110 b and the gyro disk 110 a have the same material. One ofskill in the art can modify the numbers of the channels 175 and thescope of the invention is not limited to the drawing shown in FIG. 1B.

In FIG. 1A, at least one channel 113 can be between the gyro disk 110 aand the frame 110 b for passes of the light beams 131 and 141. Forexample, the channel 113 can have a width that is equal to about thewavelength of the light beam 131 or more. In embodiments, the channel113 can continuously extend around the gyro disk 110 a (shown in FIG.1B). In other embodiments, the channel 113 can include a plurality ofholes through which the light beams 131 and 141 can pass.

Referring to FIG. 1A, electrodes 165 and 167 can be disposed over thegyro disk 110 a and the frame 110 b, respectively. The electrode 165 canbe coupled with a direct current (DC) source 169 for operation. Theelectrode 167 can be coupled with an alternating current (AC) source 168for operations. The AC source 168 and the DC source 169 are operated toprovide an oscillating vibration having a frequency between about 3 kHzand about 30 kHz. The electrodes 165 and/or 167 can include at least onematerial such as polysilicon, metallic material, other conductivematerial, and/or combinations thereof. In embodiments, the electrodes165 and 167 can be coupled with a stator for providing the oscillatingvibration.

In embodiments, the gyroscope sensor 101 can be assembled such that thelight beams 131, 141, and 151 pass the channels 113, 111 a, and 175filled with air. In other embodiments, the gyroscope sensor 101 can beassembled and filled with an inert gas (e.g., nitrogen, noble gas,and/or combinations thereof) within the channels 113, 111 a, and 175. Instill other embodiments, the pressure within the gyroscope sensor 101can be around several torrs, such as about 1 torr. One of skill in theart is able to select the inert gas and/or modify the pressure toachieve a desired gyroscope sensor.

Following are descriptions of exemplary operating methods for a systemincluding a gyroscope sensor. FIG. 2A is a schematic drawing showingthat a small Coriolis force is applied to a gyro disk. FIG. 2B is aschematic drawing illustrating that a Coriolis force is applied to agyro disk blocking a light path. FIG. 2C is an exemplary 3-dimensional(3-D) gyroscopic coordination system. In FIG. 2C, it is assumed that thegyroscopic X-axis directly toward the viewer represents a movingdirection of the gyro disk during a normal oscillating vibration, thatthe gyroscopic Z-axis represents an axis perpendicular to the gyro disk,and that the gyroscopic Y-axis represents an direction at which aCoriolis force is applied to the gyro disk when the gyroscopic Z-axis issubjected to a counter-clockwise rotation. Items of FIGS. 2A-2B that arethe same items in FIG. 1A are indicated by the same reference numerals.

In FIG. 2A, the light source 130 can provide the light beam 131, whichis received by the light receiver 155. During a normal oscillatingvibration, the gyro disk 110 a can move along the gyroscopic X-axis. Ifthe gyroscopic Z-axis is subjected to rotation or a smallcounter-clockwise rotation, no Coriolis force or a small Coriolis forceis generated at the gyroscopic Y-axis. For example, thecounter-clockwise rotation applied to the gyroscopic Z-axis is so smallsuch that a small Coriolis force generated at the gyroscopic Y-axis isapplied to the gyro disk 110 a, moving the gyro disk 110 a by a distance“a” along the gyroscopic Y-axis. Since the distance “a” is small suchthat the gyro disk 110 a is substantially free from blocking the path ofthe light beam 131, the light receiver 155 can still receive the lightbeam 131 and/or does not sense a substantial change of the phase of thelight beam 131. Since the phase of the light beam 131 is notsubstantially changed, the processing unit 170 (shown in FIG. 1A) can befree from processing received light signals and free from informing thatthe system 100 is subjected to the counter-clockwise rotation at thegyroscopic Z-axis.

In embodiments, the system 100 such as a digital camera has the gyrodisk 110 a having a normal oscillating vibration at the gyroscopicX-axis. If the digital camera is subjected to an external force such asa handshaking, the gyroscopic Z-axis of the gyro disk 110 a may besubjected to a counter-clockwise rotation as shown in FIG. 2C. Due tothe counter-clockwise rotation at the gyroscopic Z-axis, a Coriolisforce is generated and applied to the gyro disk 110 a at the gyroscopicY-axis, moving the gyro disk 110 a with a distance “b” along thegyroscopic Y-axis (shown in FIG. 2B). The moving distance “b” can causethe gyro disk 110 a to block and/or change the phase of the light beam131 received by the light receiver 155. After receiving signals of thewave phase change of the light bema 131, the processing unit 170 (shownin FIG. 1A) can process the signal, informing that the digital camera issubjected to the external force and/or controlling the digital camera tocompensate the Coriolis force.

It is noted that the light source 130 and the light receiver 155 canmonitor whether the gyro disk 110 a is subjected to any Coriolis forceduring a regular oscillating vibration at the gyroscopic X-axis, thelight source 140 and the light receiver 155 can monitor whether the gyrodisk 110 a is subjected to any Coriolis force during a regularoscillating vibration at the gyroscopic Y-axis, and the light source 150and the light receiver 160 can monitor whether the gyro disk 110 a issubjected to any Coriolis force during a regular oscillating vibrationat the gyroscopic Z-axis. In embodiments, the light sources 130, 150 andthe light receivers 155, 160 can cooperate to monitor any Coriolis forcefor the gyroscopic X-axis and gyroscopic Z-axis resonances in a subpixel101 a (shown in FIG. 2D). The light sources 140, 150 and the lightreceivers 155, 160 can cooperate to monitor any Coriolis force for thegyroscopic Z-axis and gyroscopic Y-axis resonances in a subpixel 101 b(shown in FIG. 2D). The gyroscope sensor 101 can merely include twosubpixels 101 a and 101 b for sensing any Coriolis force at threepre-determined gyroscopic axes. Compared to the above describedcapacitive gyroscope having at least three subpixels for each of thegyroscopic X-axis, gyroscopic Y-axis, and gyroscopic Z-axis resonances,the area of the gyroscope sensor 101 can be desirably reduced.

FIGS. 3A-3H are schematic cross-sectional views showing an exemplaryprocess for forming a gyro disk and a frame of a gyroscope sensor. InFIG. 3A, a dielectric 320 and a material layer 310 such as a siliconlayer can be formed over a substrate 302. The dielectric 320 and thematerial layer 310 can have a material as same as the dielectric 120 aand the gyro disk 110 a, respectively, described above in conjunctionwith FIG. 1A. The material layer 310 and the dielectric 320 can beformed by, for example, chemical vapor deposition (CVD) processes. Inembodiments, the structure shown in FIG. 3A can be asilicon-on-insulator (SOI) structure. The dielectric 320 can have athickness between about 1.5 μm and about 2 μm. The material layer canhave a thickness between about 20 μm and about 40 μm, such as about 30μm.

Referring to FIG. 3B, a portion of the material layer 310 can be removedto define a recess 312 including a plurality of channels (not shown).The channels can be the same as the channels 111 a and 175 describedabove in conjunction with FIG. 1B. The recess 312 can have a depth ofabout 5 μm or less. In embodiments, the formation of the recess 312 mayinclude patterning the material layer 310 by a photolithographicprocess, etching the material layer 310 (for example, by using a dryetching, wet etching, and/or plasma etching process), and then removingphotoresist. In other embodiments, the photolithographic process,etching process, and the removing process can be repeated or saved toobtain a desired structure.

In FIG. 3C, additional portion of the material layer 310 can be removedto define at least one channel 312 a between a gyro disk 310 a and aframe 310 b. Items of FIG. 3C that are the same items in FIG. 1A areindicated by the same reference numerals, increased by 200. Inembodiments, the formation of the channel 312 a may include patterningthe material layer 310 by a photolithography process, etching thematerial layer 310 (for example, by using a dry etching, wet etching,and/or plasma etching process), and then removing photoresist. In otherembodiments, the photolithographic process, etching process, and theremoving process can be repeated or saved to obtain a desired structure.In embodiments, a plurality of holes (not shown) are formed within thegyro disk 110 a. The holes are formed for providing paths for removingthe dielectric 320.

In FIG. 3D, a dielectric 314 can be formed within the recess 312 and thechannel 312 a (shown in FIG. 3C). The dielectric 314 can include atleast one material such as oxide, nitride, oxynitride, other dielectricthat has an etch selectivity different form that of the gyro disk 310 a.In embodiments, the dielectric 314 can be formed by using a chemicalvapor deposition process, a removing process such as chemical-mechanicalpolishing (CMP) and/or etching process, a cleaning process, and/or anycombinations thereof. In embodiments, the gyro disk 310 a and thedielectric 314 can have a substantially level surface.

In FIG. 3E, electrodes 365 and 367 can be formed over the gyro disk 310a and the frame 310 b, respectively. The electrodes 365 and 367 can bethe same as the electrodes 165 and 167, respectively, described above inconjunction with FIG. 1A. In embodiments, the electrode 365 can have awidth between about 1 μm and about 2 μm, such as about 2 μm. Inembodiments, the formation of the electrodes 365 and 367 may includeforming an electrode material layer (for example, by using a CVDprocess, patterning the electrode material layer by a photolithographyprocess, etching the electrode material layer (for example, by using adry etching, wet etching, and/or plasma etching process), and thenremoving photoresist. In other embodiments, the photolithographicprocess, etching process, and the removing process can be repeated orsaved to obtain a desired structure.

In FIG. 3F, the substrate 302 can be thinned to provide a thinnedsubstrate 302 a. The thinned substrate 302 a can have a thin thicknesssuch that channels can be desirably formed therein. The thinning processcan include, for example, a backside grinding process, etching process,polishing process, and/or any combinations thereof. In embodiments, thethinning process can be saved if a desired channel can be formed withinthe substrate 302.

Referring to FIG. 3G, at least one channel such as channels 313 can beformed within the thinned substrate 302 a, exposing the dielectric 320.In embodiments, the channels 313 can be corresponding to the channels312 a (shown in FIG. 3C). The channels 313 can have a width that isequal to about or more than a wavelength of a light beam that passesthrough the channels 313. In embodiments, the formation of the channel313 may include patterning the thinned substrate 302 a by aphotolithography process, etching the thinned substrate 302 a (forexample, by using a dry etching, wet etching, and/or plasma etchingprocess), and then removing photoresist. In other embodiments, thephotolithographic process, etching process, and the removing process canbe repeated or saved to obtain a desired structure.

Referring to FIG. 3H, a portion of the dielectric 320 (shown in FIG. 3G)can be removed to form the dielectric 320 a separating gyro disk 310 afrom the substrate 302 a. Items of FIG. 3H that are the same items inFIG. 1A are indicated by the same reference numerals, increased by 200.The removal process can include, for example, a wet etching processhaving a desired etching selectivity for the dielectric 320 to the gyrodisk 310 a. The removal process can desirably remove the portion of thedielectric 320 and be free from etching the gyro disk 310 a. Inembodiments, the dielectric 320 can include silicon oxide and theremoval process can use a solution including diluted hydrofluoric acid(HF).

After the formation of the structure shown in FIG. 3H, the structure canbe assembled with at least one light source and at least one lightreceiver to form a desired gyroscope sensor as same as the gyroscopesensor 101 described in conjunction with FIG. 1A. The gyroscope sensorcan be further assembled with power sources and at least one processingunit to form a system as same as the system 100 described above inconjunction with FIG. 1A.

It is noted that the structure (shown in FIG. 3H) for a gyroscope sensorformed by the process described above in conjunction with FIGS. 3A-3Hcan be assembled with the light sources 130, 140, and 150. Compared witha process forming different structures of the above described capacitivegyroscope for sensing Coriolis forces at a gyroscopic X-axis and agyroscopic Y-axis, the process described above in conjunction with FIGS.3A-3H can be desirably simplified. In embodiments, merely 6 layers ofmasks may be used to form the structure shown in FIG. 3H from thestructure shown in FIG. 3A.

In some embodiments, a method of forming a structure for a gyroscopesensor includes forming a first dielectric over a substrate and amaterial layer over the first dielectric layer. A first portion of thematerial layer is removed to form a recess and a second portion of thematerial layer is removed to define a first channel between a gyro diskand a frame. A second channel is formed in the substrate correspondingto the first channel, and a portion of the first dielectric is removedto form a second dielectric between the gyro disk and the substrate.

In some embodiments, a method of forming a gyroscope sensor includesforming a gyro disk structure. Forming the gyro disk structure includesforming a first dielectric over a substrate, forming a material layerover the dielectric, removing a first portion of the material layer toform a recess, the recess comprising a first channel, removing a secondportion of the material layer to define a second channel between a gyrodisk and a frame, and removing a portion of the first dielectric to forma second dielectric between the gyro disk and the substrate. Forming thegyroscope sensor also includes configuring a first light source toprovide a first light beam through a first one of the first channel orthe second channel, and configuring a first light receiver to receivethe first light beam.

In some embodiments, a method of forming a gyroscope sensor includesforming a first gyro disk spaced from a first frame by a first lightchannel. The first light channel is capable of providing a first pathfor a first light beam that is capable of being sensed for determiningmovement of the first gyro disk in a first direction. The method alsoincludes forming a second light channel within the first gyro disk. Thesecond light channel is capable of providing a second path for a secondlight beam which is capable of being sensed for determining movement ofthe first gyro disk in a second direction, wherein the second directionis different from the first direction. The method also includes forminga second gyro disk spaced from a second frame by a third light channel.The third light channel is capable of providing a third path for a thirdlight beam that is capable of being sensed for determining movement ofthe second gyro disk in a third direction, wherein the third directionis different from the first direction and the second direction.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A method of forming a structure for a gyroscopesensor, the method comprising: forming a first dielectric over asubstrate; forming a material layer over the dielectric; removing afirst portion of the material layer to form a recess; removing a secondportion of the material layer to define a first channel between a gyrodisk and a frame; forming a second channel in the substratecorresponding to the first channel; and removing a portion of the firstdielectric to form a second dielectric between the gyro disk and thesubstrate.
 2. The method of claim 1, wherein the first dielectric isformed to a thickness of 1.5 micrometers (μm) to 2 μm.
 3. The method ofclaim 1, wherein the material layer is formed to a thickness of 20micrometers (μm) to 40 μm.
 4. The method of claim 1, wherein removingthe first portion of the material layer to form the recess comprisesforming a third channel in the gyro disk.
 5. The method of claim 4,wherein removing the first portion of the material layer to form therecess further comprises forming a fourth channel in the framecorresponding to the third channel in the gyro disk.
 6. The method ofclaim 1, wherein the first channel between the gyro disk and the frameextends continuously around the gyro disk.
 7. The method of claim 1,further comprising forming a third dielectric in the recess.
 8. Themethod of claim 1, further comprising forming an electrode over the gyrodisk.
 9. The method of claim 1, further comprising forming an electrodeover the frame.
 10. The method of claim 1, further comprising thinningthe substrate prior to forming the second channel.
 11. The method ofclaim 1, wherein at least one of the first channel or the second channelis formed to have a width equal to or greater than a predeterminedwavelength of a light beam.
 12. The method of claim 1, wherein removinga portion of the first dielectric comprises a selective etch that isfree from etching the gyro disk.
 13. The method of claim 1, whereinremoving a portion of the first dielectric uses paths though the gyrodisk.
 14. A method of forming a gyroscope sensor, the method comprising:forming a gyro disk structure, forming the gyro disk structurecomprising: forming a first dielectric over a substrate; forming amaterial layer over the dielectric; removing a first portion of thematerial layer to form a recess, the recess comprising a first channel;removing a second portion of the material layer to define a secondchannel between a gyro disk and a frame; and removing a portion of thefirst dielectric to form a second dielectric between the gyro disk andthe substrate; configuring a first light source to provide a first lightbeam through a first one of the first channel or the second channel; andconfiguring a first light receiver to receive the first light beam. 15.The method of claim 14, further comprising: configuring a second lightsource to provide a second light beam through a second one of the firstchannel or the second channel; and configuring a second light receiverto receive the second light beam.
 16. The method of claim 14, furthercomprising coupling a power source to an electrode on the gyro disk orthe frame.
 17. The method of claim 14, further comprising coupling aprocessing unit to the first light source and the first light receiver.18. The method of claim 14, wherein the first light source is configuredto provide the first light beam through the second channel, and thesecond channel is formed to have a width equal to or greater than awavelength of the first light beam.
 19. The method of claim 14, furthercomprising filling at least one of the first channel or the secondchannel with an inert gas.
 20. A method of forming a gyroscope sensor,the method comprising: forming a first gyro disk spaced from a firstframe by a first light channel, wherein the first light channel iscapable of providing a first path for a first light beam that is capableof being sensed for determining movement of the first gyro disk in afirst direction; forming a second light channel within the first gyrodisk, wherein the second light channel is capable of providing a secondpath for a second light beam which is capable of being sensed fordetermining movement of the first gyro disk in a second direction,wherein the second direction is different from the first direction; andforming a second gyro disk spaced from a second frame by a third lightchannel, wherein the third light channel is capable of providing a thirdpath for a third light beam that is capable of being sensed fordetermining movement of the second gyro disk in a third direction,wherein the third direction is different from the first direction andthe second direction.